SUD35N10-26P-GE3

Part NumberSUD35N10-26P-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SUD35N10-26P
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 12V
FET Feature	-
Power Dissipation (Max)	8.3W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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