SUD35N10-26P-GE3
SUD35N10-26P-GE3
Part Number SUD35N10-26P-GE3
Description MOSFET N-CH 100V 35A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak)
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SUD35N10-26P-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SUD35N10-26P
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V
FET Feature -
Power Dissipation (Max) 8.3W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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