SUD35N10-26P-GE3
SUD35N10-26P-GE3
Part Number SUD35N10-26P-GE3 Description MOSFET N-CH 100V 35A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak)
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SUD35N10-26P-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SUD35N10-26P Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V FET Feature - Power Dissipation (Max) 8.3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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