Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SUP60030E-GE3

SUP60030E-GE3

SUP60030E-GE3

Part NumberSUP60030E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 120A TO220AB

DatasheetSUP60030E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 120A (Tc) 375W (Tc) Through Hole TO-220AB

To learn about the specification of SUP60030E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SUP60030E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SUP60030E-GE3.
We are offering SUP60030E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SUP60030E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SUP60030E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	141nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7910pF @ 40V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

SUP60030E-GE3 - Related Products

	SI8816EDB-T2-E1	Vishay Siliconix, N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	RCJ700N20TL	Rohm Semiconductor, N-Channel 200V 70A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,	View
	CSD18503Q5AT	Texas Instruments, N-Channel 40V 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	RJK0855DPB-00#J5	Renesas Electronics America, N-Channel 80V 30A (Ta) 60W (Tc) Surface Mount LFPAK,	View
	IRFS3207ZTRRPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263), HEXFET®	View
	SI5418DU-T1-GE3	Vishay Siliconix, N-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single, TrenchFET®	View
	IRFB4229PBF	Infineon Technologies, N-Channel 250V 46A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®	View
	FCP20N60	ON Semiconductor, N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3, SuperFET™	View
	IPB60R160C6ATMA1	Infineon Technologies, N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™	View
	IRFR7546TRPBF	Infineon Technologies, N-Channel 60V 56A (Tc) 99W (Tc) Surface Mount DPAK, StrongIRFET™	View
	NX3020NAK,215	Nexperia USA Inc., N-Channel 30V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB,	View
	SQD25N15-52_GE3	Vishay Siliconix, N-Channel 150V 25A (Tc) 107W (Tc) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101, TrenchFET®	View

SUP60030E-GE3 - Tags

SUP60030E-GE3 SUP60030E-GE3 PDF SUP60030E-GE3 datasheet SUP60030E-GE3 specification SUP60030E-GE3 image SUP60030E-GE3 India Renesas Electronics India SUP60030E-GE3 buy SUP60030E-GE3 SUP60030E-GE3 price SUP60030E-GE3 distributor SUP60030E-GE3 supplier SUP60030E-GE3 wholesales