SUP70060E-GE3
SUP70060E-GE3
Part Number SUP70060E-GE3 Description MOSFET N-CH 100V 131A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 131A (Tc) 200W (Tc) Through Hole TO-220AB
To learn about the specification of SUP70060E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SUP70060E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SUP70060E-GE3.
We are offering SUP70060E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SUP70060E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SUP70060E Standard Package 50 Manufacturer Vishay Siliconix Series ThunderFET® Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 131A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 50V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
SUP70060E-GE3 - Related ProductsMore >>
SIRA00DP-T1-GE3 Vishay Siliconix, N-Channel 30V 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPP60R280CFD7XKSA1 Infineon Technologies, N-Channel 650V 9A (Tc) 52W (Tc) Through Hole PG-TO220-3, CoolMOS™ CFD7
View
SIS406DN-T1-GE3 Vishay Siliconix, N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FDB070AN06A0 ON Semiconductor, N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface Mount D²PAK, PowerTrench®
View
IPB020NE7N3GATMA1 Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
STP13NM60ND STMicroelectronics, N-Channel 600V 11A (Tc) 109W (Tc) Through Hole TO-220, FDmesh™ II
View
DMN31D5UFZ-7B Diodes Incorporated, N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3,
View
IPL60R075CFD7AUMA1 Infineon Technologies, N-Channel 650V 33A (Tc) 189W (Tc) Surface Mount PG-VSON-4, CoolMOS™ CFD7
View
SISA96DN-T1-GE3 Vishay Siliconix, N-Channel 30V 16A (Tc) 26.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV
View
VN2210N2 Microchip Technology, N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39,
View
TSM60NB900CH C5G Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 36.8W (Tc) Through Hole TO-251 (IPAK),
View
SIR638ADP-T1-RE3 Vishay Siliconix, N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
SUP70060E-GE3 - Tags
English
