TB100EP


TB100EP

Part NumberTB100EP

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TB100EP - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package5000
ManufacturerWeEn Semiconductors
Series-
PackagingTape & Box (TB)
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)700V
Vce Saturation (Max) @ Ib, Ic1V @ 150mA, 750mA
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 100mA, 5V
Power - Max2W
Frequency - Transition-
Operating Temperature150°C
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

TB100EP - Tags

TB100EP TB100EP PDF TB100EP datasheet TB100EP specification TB100EP image TB100EP India Renesas Electronics India TB100EP buy TB100EP TB100EP price TB100EP distributor TB100EP supplier TB100EP wholesales