Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	TBC847
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	400mV @ 100mA, 5mA
Current - Collector Cutoff (Max)	30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	320mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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TBC847B,LM

Part NumberTBC847B,LM