Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	TBC847
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	400mV @ 100mA, 5mA
Current - Collector Cutoff (Max)	30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	320mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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DZT2222A-13	Diodes Incorporated, Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 1W Surface Mount SOT-223,	View
CEN-U07	Central Semiconductor Corp, Bipolar (BJT) Transistor NPN 100V 2A 50MHz 1.75W Through Hole TO-202,	View
2N3904BU	ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92-3,	View
KSC2690AYS	ON Semiconductor, Bipolar (BJT) Transistor NPN 160V 1.2A 155MHz 1.2W Through Hole TO-126-3,	View
MPSA42-AP	Micro Commercial Co, Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 625mW Through Hole TO-92,	View

TBC847B,LM

Part NumberTBC847B,LM