TK10P60W,RVQ
TK10P60W,RVQ
Part Number TK10P60W,RVQ
Description MOSFET N CH 600V 9.7A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK
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TK10P60W,RVQ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK10P60W
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V
FET Feature Super Junction
Power Dissipation (Max) 80W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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