Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK12A50E
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

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TK12A50E,S5X

Part NumberTK12A50E,S5X