TK12E80W,S1X
TK12E80W,S1X
Part Number TK12E80W,S1X Description MOSFET N-CH 800V 11.5A TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220
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TK12E80W,S1X - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK12E80W Standard Package 50 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id 4V @ 570µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 300V FET Feature - Power Dissipation (Max) 165W (Tc) Operating Temperature 150°C Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
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