TK12E80W,S1X
TK12E80W,S1X
Part Number TK12E80W,S1X
Description MOSFET N-CH 800V 11.5A TO220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220
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TK12E80W,S1X - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK12E80W
Standard Package 50
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 300V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature 150°C
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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