TK160F10N1L,LQ

Part NumberTK160F10N1L,LQ

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTK160F10N1L

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

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TK160F10N1L,LQ - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK160F10N1L

Standard Package

1000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

160A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10100pF @ 10V

FET Feature

Power Dissipation (Max)

375W (Tc)

Operating Temperature

175°C

Mounting Type

Surface Mount

Supplier Device Package

TO-220SM(W)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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