TK1K2A60F,S4X
TK1K2A60F,S4X
Part Number TK1K2A60F,S4X Description PB-F POWER MOSFET TRANSISTOR TO- Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 6A (Ta) 35W (Tc) Through Hole TO-220SIS
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TK1K2A60F,S4X - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK1K2A60F Standard Package 50 Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 630µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 740pF @ 300V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 150°C Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack
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