Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK31E60X
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 300V
FET Feature	Super Junction
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

PSMN1R8-40YLC,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8,	View
SIHB30N60E-GE3	Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D2PAK,	View
MCH3478-TL-W	ON Semiconductor, N-Channel 30V 2A (Ta) 800mW (Ta) Surface Mount 3-MCPH,	View
STI6N62K3	STMicroelectronics, N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole I2PAK, SuperMESH3™	View
PSMN017-30BL,118	Nexperia USA Inc., N-Channel 30V 32A (Tc) 47W (Tc) Surface Mount D2PAK,	View
STW24N60M2	STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247, MDmesh™ II Plus	View
FDD3N40TM	ON Semiconductor, N-Channel 400V 2A (Tc) 30W (Tc) Surface Mount D-Pak, UniFET™	View
SI4126DY-T1-GE3	Vishay Siliconix, N-Channel 30V 39A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
IPB020NE7N3GATMA1	Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
CSD13385F5	Texas Instruments, N-Channel 12V 7.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
STB20N95K5	STMicroelectronics, N-Channel 950V 17.5A (Tc) 250W (Tc) Surface Mount D2PAK, SuperMESH5™	View
STP60NF10	STMicroelectronics, N-Channel 100V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II	View

TK31E60X,S1X

Part NumberTK31E60X,S1X