TK31E60X,S1X
TK31E60X,S1X
Part Number TK31E60X,S1X Description MOSFET N-CH 600V 30.8A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-220
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TK31E60X,S1X - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK31E60X Standard Package 50 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV-H Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 88mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V FET Feature Super Junction Power Dissipation (Max) 230W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
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