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TK31E60X,S1X

TK31E60X,S1X

Part NumberTK31E60X,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 600V 30.8A TO-220

DatasheetTK31E60X

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-220

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TK31E60X,S1X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK31E60X
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 300V
FET Feature	Super Junction
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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TK31E60X,S1X - Tags

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