Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TK32E12N1,S1X

TK32E12N1,S1X

TK32E12N1,S1X

Part NumberTK32E12N1,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 120V 60A TO-220

DatasheetTK32E12N1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 60A (Tc) 98W (Tc) Through Hole TO-220

To learn about the specification of TK32E12N1,S1X, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TK32E12N1,S1X with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TK32E12N1,S1X.
We are offering TK32E12N1,S1X for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TK32E12N1,S1X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK32E12N1
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 60V
FET Feature	-
Power Dissipation (Max)	98W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

TK32E12N1,S1X - Related Products

	BSC110N15NS5ATMA1	Infineon Technologies, N-Channel 150V 76A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	DMN62D0U-13	Diodes Incorporated, N-Channel 60V 380mA (Ta) 380mW (Ta) Surface Mount SOT-23,	View
	IRFBE30PBF	Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	IPD65R400CEAUMA1	Infineon Technologies, N-Channel 650V 15.1A (Tc) 118W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
	IPB60R060P7ATMA1	Infineon Technologies, N-Channel 650V 48A (Tc) 164W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7	View
	SIRA18DP-T1-GE3	Vishay Siliconix, N-Channel 30V 33A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI2318DS-T1-E3	Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRFR3806TRPBF	Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D-Pak, HEXFET®	View
	RQ3G100GNTB	Rohm Semiconductor, N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View
	TSM2318CX RFG	Taiwan Semiconductor Corporation, N-Channel 40V 3.9A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	NX3020NAKW,115	Nexperia USA Inc., N-Channel 30V 180mA (Ta) 260mW (Ta), 1.1W (Tc) Surface Mount SC-70,	View
	CSD18535KCS	Texas Instruments, N-Channel 60V 200A (Ta) 300W (Tc) Through Hole TO-220-3, NexFET™	View

TK32E12N1,S1X - Tags

TK32E12N1,S1X TK32E12N1,S1X PDF TK32E12N1,S1X datasheet TK32E12N1,S1X specification TK32E12N1,S1X image TK32E12N1,S1X India Renesas Electronics India TK32E12N1,S1X buy TK32E12N1,S1X TK32E12N1,S1X price TK32E12N1,S1X distributor TK32E12N1,S1X supplier TK32E12N1,S1X wholesales