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TK39J60W,S1VQ

TK39J60W,S1VQ

Part NumberTK39J60W,S1VQ

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 600V 38.8A TO-3P

DatasheetTK39J60W

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)

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TK39J60W,S1VQ - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK39J60W
Standard Package	25
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 300V
FET Feature	Super Junction
Power Dissipation (Max)	270W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

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