TK3R1E04PL,S1X


TK3R1E04PL,S1X

Part NumberTK3R1E04PL,S1X

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TK3R1E04PL,S1X - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIX-H
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs63.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4670pF @ 20V
FET Feature-
Power Dissipation (Max)87W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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TK3R1E04PL,S1X - Tags

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