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TK560A65Y,S4X

TK560A65Y,S4X

Part NumberTK560A65Y,S4X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 650V 7A TO220SIS

DatasheetTK560A65Y

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 30W Through Hole TO-220SIS

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TK560A65Y,S4X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK560A65Y
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	560mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 300V
FET Feature	-
Power Dissipation (Max)	30W
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

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TK560A65Y,S4X - Tags

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