Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK62J60W
Standard Package	25
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	38mOhm @ 30.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6500pF @ 300V
FET Feature	Super Junction
Power Dissipation (Max)	400W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

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IPD80R1K4CEATMA1	Infineon Technologies, N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
R6030KNX	Rohm Semiconductor, N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-220FM,	View
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TK62J60W,S1VQ

Part NumberTK62J60W,S1VQ