TK65E10N1,S1X
TK65E10N1,S1X
Part Number TK65E10N1,S1X Description MOSFET N CH 100V 148A TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 148A (Ta) 192W (Tc) Through Hole TO-220
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TK65E10N1,S1X - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK65E10N1 Standard Package 50 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 148A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 50V FET Feature - Power Dissipation (Max) 192W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
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