TK65E10N1,S1X


TK65E10N1,S1X

Part NumberTK65E10N1,S1X

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TK65E10N1,S1X - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C148A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400pF @ 50V
FET Feature-
Power Dissipation (Max)192W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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TK65E10N1,S1X - Tags

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