Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	TMBT3904
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Power - Max	320mW
Frequency - Transition	300MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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KSC945GTA	ON Semiconductor, Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 250mW Through Hole TO-92-3,	View
BC847W,115	Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200mW Surface Mount SC-70,	View
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BC846BW-TP	Micro Commercial Co, Bipolar (BJT) Transistor NPN 65V 100mA 100MHz Surface Mount SOT-323,	View
2SD1802S-TL-E	ON Semiconductor, Bipolar (BJT) Transistor NPN 50V 3A 150MHz 1W Surface Mount 2-TP-FA,	View
2ST501T	STMicroelectronics, Bipolar (BJT) Transistor NPN - Darlington 350V 4A 100W Through Hole TO-220AB,	View

TMBT3904,LM

Part NumberTMBT3904,LM