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TN0110N3-G

TN0110N3-G

Part NumberTN0110N3-G

ManufacturerMicrochip Technology

DescriptionMOSFET N-CH 100V 350MA TO92-3

DatasheetTN0110

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 350mA (Tj) 1W (Tc) Through Hole TO-92-3

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TN0110N3-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TN0110
Standard Package	1000
Manufacturer	Microchip Technology
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 500µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
FET Feature	-
Power Dissipation (Max)	1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

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