TN5325K1-G


TN5325K1-G

Part NumberTN5325K1-G

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TN5325K1-G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerMicrochip Technology
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds110pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Operating Temperature-55°C ~ 150°C (TA)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB (SOT23)
Package / CaseTO-236-3, SC-59, SOT-23-3

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TN5325K1-G - Tags

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