TP2520N8-G
TP2520N8-G
Part Number TP2520N8-G
Description MOSFET P-CH 200V 0.26A SOT89-3
Package / Case TO-243AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 200V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
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TP2520N8-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TP2520
Standard Package 1
Manufacturer Microchip Technology
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 260mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-243AA (SOT-89)
Package / Case TO-243AA
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