TP65H070LDG

Part NumberTP65H070LDG

ManufacturerTransphorm

Description650 V 25 A GAN FET

DatasheetTP65H070L Datasheet

Package / Case3-PowerDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)

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TP65H070LDG - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TP65H070L Datasheet

Standard Package

Manufacturer

Transphorm

Series

TP65H070L

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

85mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4.8V @ 700µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 400V

FET Feature

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-PQFN (8x8)

Package / Case

3-PowerDFN

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