TPC6008-H(TE85L,FM

Part NumberTPC6008-H(TE85L,FM

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 30V 5.9A VS6

DatasheetTPC6008-H

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.9A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)

To learn about the specification of TPC6008-H(TE85L,FM, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPC6008-H(TE85L,FM with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPC6008-H(TE85L,FM.
We are offering TPC6008-H(TE85L,FM for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPC6008-H(TE85L,FM - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPC6008-H

Standard Package

3000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI-H

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

4.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 10V

FET Feature

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-6 (2.9x2.8)

Package / Case

SOT-23-6 Thin, TSOT-23-6

All categories