TPCF8B01(TE85L,F,M

Part NumberTPCF8B01(TE85L,F,M

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 2.7A VS-8

DatasheetTPCF8B01

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.7A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5)

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TPCF8B01(TE85L,F,M - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPCF8B01

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

110mOhm @ 1.4A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

330mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-8 (2.9x1.5)

Package / Case

8-SMD, Flat Lead

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