TPH1R712MD,L1Q


TPH1R712MD,L1Q

Part NumberTPH1R712MD,L1Q

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPH1R712MD,L1Q - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVI
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs1.7mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs182nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds10900pF @ 10V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

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