TPH3212PS
TPH3212PS
Part Number TPH3212PS
Description GANFET N-CH 650V 27A TO220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 27A (Tc) 104W (Tc) Through Hole TO-220AB
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TPH3212PS - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH3212PS
Standard Package 50
Manufacturer Transphorm
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 17A, 8V
Vgs(th) (Max) @ Id 2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 400V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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