Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN11006NL
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.4mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 30V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

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IRL630STRRPBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
DMN4060SVT-7	Diodes Incorporated, N-Channel 45V 4.8A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
FDN327N	ON Semiconductor, N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
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PSMN8R7-80BS,118	Nexperia USA Inc., N-Channel 80V 90A (Tc) 170W (Tc) Surface Mount D2PAK,	View
IRFR224TRPBF	Vishay Siliconix, N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
IRLB4030PBF	Infineon Technologies, N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®	View
IRFBE30LPBF	Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole I2PAK,	View
TSM4806CS RLG	Taiwan Semiconductor Corporation, N-Channel 20V 28A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
PSMN9R5-30YLC,115	Nexperia USA Inc., N-Channel 30V 44A (Tc) 34W (Tc) Surface Mount LFPAK56, Power-SO8,	View

TPN11006NL,LQ

Part NumberTPN11006NL,LQ