TPN1600ANH,L1Q
TPN1600ANH,L1Q
Part Number TPN1600ANH,L1Q
Description MOSFET N CH 100V 17A 8TSON-ADV
Package / Case 8-PowerVDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN1600ANH,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN1600ANH
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 50V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
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