TPN1R603PL,L1Q
TPN1R603PL,L1Q
Part Number TPN1R603PL,L1Q Description X35 PB-F POWER MOSFET TRANSISTOR Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN1R603PL,L1Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN1R603PL Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.1V @ 300µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature 175°C Mounting Type Surface Mount Supplier Device Package 8-TSON Advance (3.3x3.3) Package / Case 8-PowerVDFN
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