TPN2010FNH,L1Q
TPN2010FNH,L1Q
Part Number TPN2010FNH,L1Q
Description MOSFET N-CH 250V 5.6A 8TSON
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 250V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN2010FNH,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN2010FNH
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 100V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
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