Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN2010FNH,L1Q

TPN2010FNH,L1Q

TPN2010FNH,L1Q

Part NumberTPN2010FNH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 250V 5.6A 8TSON

DatasheetTPN2010FNH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN2010FNH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN2010FNH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN2010FNH,L1Q.
We are offering TPN2010FNH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN2010FNH,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN2010FNH
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 100V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN2010FNH,L1Q - Related Products

	STD10NM60N	STMicroelectronics, N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II	View
	IPP60R165CPXKSA1	Infineon Technologies, N-Channel 600V 21A (Tc) 192W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
	IRFBC30ASPBF	Vishay Siliconix, N-Channel 600V 3.6A (Tc) 74W (Tc) Surface Mount D2PAK,	View
	IRFU13N20DPBF	Infineon Technologies, N-Channel 200V 13A (Tc) 110W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	FDB9409L-F085	ON Semiconductor, N-Channel 40V 90A (Tc) 94W (Tj) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, PowerTrench®	View
	DMN65D8LQ-7	Diodes Incorporated, N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View
	STD2N95K5	STMicroelectronics, N-Channel 950V 2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH5™	View
	IRF530NSTRLPBF	Infineon Technologies, N-Channel 100V 17A (Tc) 3.8W (Ta), 70W (Tc) Surface Mount D2PAK, HEXFET®	View
	STU7N80K5	STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole I-PAK, SuperMESH5™	View
	STB36NM60ND	STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, FDmesh™ II	View
	DMG1012T-7	Diodes Incorporated, N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523,	View
	SIHF10N40D-E3	Vishay Siliconix, N-Channel 400V 10A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,	View

TPN2010FNH,L1Q - Tags

TPN2010FNH,L1Q TPN2010FNH,L1Q PDF TPN2010FNH,L1Q datasheet TPN2010FNH,L1Q specification TPN2010FNH,L1Q image TPN2010FNH,L1Q India Renesas Electronics India TPN2010FNH,L1Q buy TPN2010FNH,L1Q TPN2010FNH,L1Q price TPN2010FNH,L1Q distributor TPN2010FNH,L1Q supplier TPN2010FNH,L1Q wholesales