Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R712MD,L1Q

TPN4R712MD,L1Q

TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 36A 8TSON ADV

DatasheetTPN4R712MD

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R712MD,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R712MD
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R712MD,L1Q - Related Products

	ZXMP10A18GTA	Diodes Incorporated, P-Channel 100V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	CMLDM8120G TR	Central Semiconductor Corp, P-Channel 20V 860mA (Ta) 350mW (Ta) Surface Mount SOT-563,	View
	SQ4431EY-T1_GE3	Vishay Siliconix, P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	IRF9Z10PBF	Vishay Siliconix, P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB,	View
	RW1E025RPT2CR	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	SQM50P03-07_GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	SI8481DB-T1-E1	Vishay Siliconix, P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6), TrenchFET® Gen III	View
	SSM3J352F,LF	Toshiba Semiconductor and Storage, P-Channel 20V 2A (Ta) 1.2W (Ta) Surface Mount S-Mini, U-MOSVI	View
	SI6423DQ-T1-GE3	Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View
	SI4485DY-T1-GE3	Vishay Siliconix, P-Channel 30V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	RTL020P02TR	Rohm Semiconductor, P-Channel 20V 2A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	DMP3105LVT-7	Diodes Incorporated, P-Channel 30V 3.1A (Ta) 1.15W (Ta) Surface Mount TSOT-23-6,	View

TPN4R712MD,L1Q - Tags

TPN4R712MD,L1Q TPN4R712MD,L1Q PDF TPN4R712MD,L1Q datasheet TPN4R712MD,L1Q specification TPN4R712MD,L1Q image TPN4R712MD,L1Q India Renesas Electronics India TPN4R712MD,L1Q buy TPN4R712MD,L1Q TPN4R712MD,L1Q price TPN4R712MD,L1Q distributor TPN4R712MD,L1Q supplier TPN4R712MD,L1Q wholesales