Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R712MD,L1Q

TPN4R712MD,L1Q

TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 36A 8TSON ADV

DatasheetTPN4R712MD

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R712MD,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R712MD
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R712MD,L1Q - Related Products

	RSH070P05TB1	Rohm Semiconductor, P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	FDN302P	ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	SI5471DC-T1-GE3	Vishay Siliconix, P-Channel 20V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™, TrenchFET®	View
	DMP2035UVTQ-7	Diodes Incorporated, P-Channel 20V 7.2A (Ta) 2W (Ta) Surface Mount TSOT-26, Automotive, AEC-Q101	View
	NTLJS3113PT1G	ON Semiconductor, P-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2), µCool™	View
	SQ3425EV-T1_GE3	Vishay Siliconix, P-Channel 20V 7.4A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	SSM3J56ACT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI	View
	SQJ407EP-T1_GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SI7431DP-T1-E3	Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRFR9024NTRLPBF	Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Surface Mount D-Pak, HEXFET®	View
	DMG2301LK-7	Diodes Incorporated, P-Channel 20V 2.4A (Ta) 840mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	IXTA10P50P	IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarP™	View

TPN4R712MD,L1Q - Tags

TPN4R712MD,L1Q TPN4R712MD,L1Q PDF TPN4R712MD,L1Q datasheet TPN4R712MD,L1Q specification TPN4R712MD,L1Q image TPN4R712MD,L1Q India Renesas Electronics India TPN4R712MD,L1Q buy TPN4R712MD,L1Q TPN4R712MD,L1Q price TPN4R712MD,L1Q distributor TPN4R712MD,L1Q supplier TPN4R712MD,L1Q wholesales