TPS1120DR


TPS1120DR

Part NumberTPS1120DR

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPS1120DR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerTexas Instruments
Series-
PackagingCut Tape (CT)
Part StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25°C1.17A
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max840mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Base Part NumberTPS1120

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