TPW1R306PL,L1Q
TPW1R306PL,L1Q
Part Number TPW1R306PL,L1Q Description X35 PB-F POWER MOSFET TRANSISTOR Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
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TPW1R306PL,L1Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPW1R306PL Datasheet Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 260A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.29mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 30V FET Feature - Power Dissipation (Max) 960mW (Ta), 170W (Tc) Operating Temperature 175°C Mounting Type Surface Mount Supplier Device Package 8-DSOP Advance Package / Case 8-PowerVDFN
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