TPW1R306PL,L1Q

Part NumberTPW1R306PL,L1Q

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW1R306PL Datasheet
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 30V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

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