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TRS10E65C,S1Q

TRS10E65C,S1Q

Part NumberTRS10E65C,S1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionDIODE SCHOTTKY 650V 10A TO220-2L

DatasheetTRS10E65C

Package / CaseTO-220-2

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220-2L

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TRS10E65C,S1Q - Product Attributes

Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	TRS10E65C
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Last Time Buy
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	10A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	90µA @ 650V
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C (Max)

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TRS10E65C,S1Q - Tags

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