TRS10E65C,S1Q
TRS10E65C,S1Q
Part Number TRS10E65C,S1Q Description DIODE SCHOTTKY 650V 10A TO220-2L Package / Case TO-220-2Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220-2L
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TRS10E65C,S1Q - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet TRS10E65C Standard Package 50 Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Last Time Buy Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 90µA @ 650V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2L Operating Temperature - Junction 175°C (Max)
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