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TSM10NC65CF C0G

TSM10NC65CF C0G

Part NumberTSM10NC65CF C0G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CH 650V 10A ITO220S

DatasheetTSM10NC65CF

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 10A (Tc) 45W (Tc) Through Hole ITO-220S

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TSM10NC65CF C0G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM10NC65CF
Standard Package	1000
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	900mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1650pF @ 50V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220S
Package / Case	TO-220-3 Full Pack

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