TSM1NB60CW RPG
TSM1NB60CW RPG
Part Number TSM1NB60CW RPG Description MOSFET N-CHANNEL 600V 1A SOT223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 1A (Tc) 39W (Tc) Surface Mount SOT-223
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TSM1NB60CW RPG - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM1NB60 Standard Package 1 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 138pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA
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