TSM4N60ECP ROG
TSM4N60ECP ROG
Part Number TSM4N60ECP ROG
Description MOSFET N-CHANNEL 600V 4A TO252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 4A (Tc) 86.2W (Tc) Surface Mount TO-252, (D-Pak)
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TSM4N60ECP ROG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM4N60E
Standard Package 1
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 545pF @ 25V
FET Feature -
Power Dissipation (Max) 86.2W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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