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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet TSM8568CS
Standard Package 2500
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 15A (Tc), 13A (Tc)
Rds On (Max) @ Id, Vgs 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 15V, 1089pF @ 15V
Power - Max 6W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
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IXYS, Mosfet Array N and P-Channel 200V 26A, 17A 125W Through Hole ISOPLUS i4-PAC™, Polar™
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Microchip Technology, Mosfet Array N and P-Channel 200V Surface Mount 8-SOIC,
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Diodes Incorporated, Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 1A, 800mA 1.3W Surface Mount SM8,
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Microchip Technology, Mosfet Array N and P-Channel 150V Surface Mount 8-SOIC,
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SH8M13GZETB
Rohm Semiconductor, Mosfet Array N and P-Channel 30V 6A, 7A 2W Surface Mount 8-SOP,
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IRF7105TRPBF
Infineon Technologies, Mosfet Array N and P-Channel 25V 3.5A, 2.3A 2W Surface Mount 8-SO, HEXFET®
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US6M2TR
Rohm Semiconductor, Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6,
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