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TSM950N10CW RPG


TSM950N10CW RPG

Part NumberTSM950N10CW RPG

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TSM950N10CW RPG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs95mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1480pF @ 50V
FET Feature-
Power Dissipation (Max)9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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