ULN2069B
ULN2069B
Part Number ULN2069B
Description TRANS 4NPN DARL 80V 1.75A 16DIP
Package / Case 16-PowerDIP (0.300", 7.62mm)
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 80V 1.75A 1W Through Hole 16-PowerDIP (20x7.10)
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ULN2069B - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet ULN20xxB
Standard Package 25
Manufacturer STMicroelectronics
Series -
Packaging Tube
Part Status Active
Transistor Type 4 NPN Darlington (Quad)
Current - Collector (Ic) (Max) 1.75A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2.25mA, 1.5A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 1W
Frequency - Transition -
Operating Temperature -20°C ~ 85°C (TA)
Mounting Type Through Hole
Package / Case 16-PowerDIP (0.300", 7.62mm)
Supplier Device Package 16-PowerDIP (20x7.10)
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Diodes Incorporated, Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 200mA 300MHz 300mW Surface Mount SOT-963,
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ON Semiconductor, Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 200mA 300MHz 150mW Surface Mount SC-88/SC70-6/SOT-363,
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2SC4207-GR(TE85L,F
Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Emitter 50V 150mA 80MHz 300mW Surface Mount SMV,
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ULN2003AS16-13
Diodes Incorporated, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SO,
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ULN2069B - Tags