Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ VP0109N3-G

VP0109N3-G

VP0109N3-G

Part NumberVP0109N3-G

ManufacturerMicrochip Technology

DescriptionMOSFET P-CH 90V 0.25A TO92-3

DatasheetVP0109

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 90V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

To learn about the specification of VP0109N3-G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add VP0109N3-G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of VP0109N3-G.
We are offering VP0109N3-G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

VP0109N3-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	VP0109
Standard Package	1000
Manufacturer	Microchip Technology
Series	-
Packaging	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	90V
Current - Continuous Drain (Id) @ 25°C	250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
FET Feature	-
Power Dissipation (Max)	1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

VP0109N3-G - Related Products

	IRLML2244TRPBF	Infineon Technologies, P-Channel 20V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	IRFR9220TRPBF	Vishay Siliconix, P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SI2367DS-T1-GE3	Vishay Siliconix, P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI7309DN-T1-GE3	Vishay Siliconix, P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SSM3J144TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	SQJ431AEP-T1_GE3	Vishay Siliconix, P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IRFI9620GPBF	Vishay Siliconix, P-Channel 200V 3A (Tc) 30W (Tc) Through Hole TO-220-3,	View
	TSM680P06CH X0G	Taiwan Semiconductor Corporation, P-Channel 60V 18A (Tc) 20W (Tc) Through Hole TO-251 (IPAK),	View
	RRL025P03TR	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 320mW (Ta) Surface Mount TUMT6,	View
	BUK6D43-40PX	Nexperia USA Inc., P-Channel 40V 6A (Ta) 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101	View
	TSM650P02CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.1A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	IRF5803TRPBF	Infineon Technologies, P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View

VP0109N3-G - Tags

VP0109N3-G VP0109N3-G PDF VP0109N3-G datasheet VP0109N3-G specification VP0109N3-G image VP0109N3-G India Renesas Electronics India VP0109N3-G buy VP0109N3-G VP0109N3-G price VP0109N3-G distributor VP0109N3-G supplier VP0109N3-G wholesales