VS-GA200TH60S

Part NumberVS-GA200TH60S

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 600V 260A 1042W INT-A-PAK

DatasheetVS-GA200TH60S

Package / CaseDouble INT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Half Bridge 600V 260A 1042W Chassis Mount Double INT-A-PAK

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VS-GA200TH60S - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GA200TH60S

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Active

IGBT Type

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

260A

Power - Max

1042W

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 200A (Typ)

Current - Collector Cutoff (Max)

5µA

Input Capacitance (Cies) @ Vce

13.1nF @ 25V

Input

Standard

NTC Thermistor

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 4)

Supplier Device Package

Double INT-A-PAK

All categories

VS-GA200TH60S

Part NumberVS-GA200TH60S

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 600V 260A 1042W INT-A-PAK

DatasheetVS-GA200TH60S

Package / CaseDouble INT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Half Bridge 600V 260A 1042W Chassis Mount Double INT-A-PAK

VS-GA200TH60S - Product Attributes

VS-GA200TH60S - Tags