VS-GB100TH120N


VS-GB100TH120N

Part NumberVS-GB100TH120N

Manufacturer

Description

Package / CaseDouble INT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

VS-GB100TH120N - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Standard Package12
ManufacturerVishay Semiconductor Diodes Division
Series-
Part StatusLast Time Buy
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)200A
Power - Max833W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 100A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce8.58nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 4)
Supplier Device PackageDouble INT-A-PAK

VS-GB100TH120N - Tags

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