VS-GB100TH120U

Part NumberVS-GB100TH120U

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 200A 1136W INT-A-PAK

DatasheetVS-GB100TH120U

Package / CaseDouble INT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module NPT Half Bridge 1200V 200A 1136W Chassis Mount Double INT-A-PAK

To learn about the specification of VS-GB100TH120U, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add VS-GB100TH120U with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of VS-GB100TH120U.
We are offering VS-GB100TH120U for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

VS-GB100TH120U - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GB100TH120U

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Active

IGBT Type

NPT

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

200A

Power - Max

1136W

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 100A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

8.45nF @ 20V

Input

Standard

NTC Thermistor

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 4)

Supplier Device Package

Double INT-A-PAK

All categories

VS-GB100TH120U

Part NumberVS-GB100TH120U

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 200A 1136W INT-A-PAK

DatasheetVS-GB100TH120U

Package / CaseDouble INT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module NPT Half Bridge 1200V 200A 1136W Chassis Mount Double INT-A-PAK

VS-GB100TH120U - Product Attributes

VS-GB100TH120U - Tags