VS-GB200TH120U

Part NumberVS-GB200TH120U

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 330A 1316W INT-A-PAK

DatasheetVS-GB200TH120U

Package / CaseDouble INT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Half Bridge 1200V 330A 1316W Chassis Mount Double INT-A-PAK

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VS-GB200TH120U - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GB200TH120U

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Active

IGBT Type

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

330A

Power - Max

1316W

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 200A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

16.9nF @ 30V

Input

Standard

NTC Thermistor

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 4)

Supplier Device Package

Double INT-A-PAK

All categories

VS-GB200TH120U

Part NumberVS-GB200TH120U

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 330A 1316W INT-A-PAK

DatasheetVS-GB200TH120U

Package / CaseDouble INT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Half Bridge 1200V 330A 1316W Chassis Mount Double INT-A-PAK

VS-GB200TH120U - Product Attributes

VS-GB200TH120U - Tags