VS-GT100TP60N

Part NumberVS-GT100TP60N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 600V 160A 417W INT-A-PAK

DatasheetVS-GT100TP60N

Package / CaseINT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 600V 160A 417W Chassis Mount INT-A-PAK

To learn about the specification of VS-GT100TP60N, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add VS-GT100TP60N with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of VS-GT100TP60N.
We are offering VS-GT100TP60N for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

VS-GT100TP60N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GT100TP60N

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Active

IGBT Type

Trench

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

160A

Power - Max

417W

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 100A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

7.71nF @ 30V

Input

Standard

NTC Thermistor

Operating Temperature

175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

INT-A-PAK (3 + 4)

Supplier Device Package

INT-A-PAK

All categories

VS-GT100TP60N

Part NumberVS-GT100TP60N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 600V 160A 417W INT-A-PAK

DatasheetVS-GT100TP60N

Package / CaseINT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 600V 160A 417W Chassis Mount INT-A-PAK

VS-GT100TP60N - Product Attributes

VS-GT100TP60N - Tags