VS-GT300YH120N

Part NumberVS-GT300YH120N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 341A 1042W DIAP

DatasheetVS-GT300YH120N

Package / CaseDouble INT-A-PAK (3 + 8)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 1200V 341A 1042W Chassis Mount Double INT-A-PAK

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VS-GT300YH120N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GT300YH120N

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Active

IGBT Type

Trench

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

341A

Power - Max

1042W

Vce(on) (Max) @ Vge, Ic

2.17V @ 15V, 300A (Typ)

Current - Collector Cutoff (Max)

300µA

Input Capacitance (Cies) @ Vce

36nF @ 30V

Input

Standard

NTC Thermistor

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 8)

Supplier Device Package

Double INT-A-PAK

All categories

VS-GT300YH120N

Part NumberVS-GT300YH120N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 341A 1042W DIAP

DatasheetVS-GT300YH120N

Package / CaseDouble INT-A-PAK (3 + 8)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 1200V 341A 1042W Chassis Mount Double INT-A-PAK

VS-GT300YH120N - Product Attributes

VS-GT300YH120N - Tags