ZTX855
ZTX855
Part Number ZTX855 Description TRANS NPN 150V 4A E-LINE Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Through Hole E-Line (TO-92 compatible)
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ZTX855 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet ZTX855 Standard Package 4000 Manufacturer Diodes Incorporated Series - Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 260mV @ 400mA, 4A Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V Power - Max 1.2W Frequency - Transition 90MHz Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package E-Line (TO-92 compatible)
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PHE13007,127 WeEn Semiconductors, Bipolar (BJT) Transistor NPN 400V 8A 80W Through Hole TO-220AB,
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BF820,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 300V 50mA 60MHz 250mW Surface Mount TO-236AB, Automotive, AEC-Q101
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