ZXTN2010GTA


ZXTN2010GTA

Part NumberZXTN2010GTA

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

ZXTN2010GTA - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerDiodes Incorporated
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)6A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic260mV @ 300mA, 6A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 1V
Power - Max3W
Frequency - Transition130MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223
Base Part NumberZXTN2010

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ZXTN2010GTA - Tags

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